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Lithium niobate reactive ion etching

Scientific Publication

Report Number:
DSTO-TN-0291
Authors:
Winnall, S.; Winderbaum, S.
Issue Date:
2000-07
AR Number:
AR-011-490
Classification:
UNCLASSIFIED
Report Type:
Technical Note
Division:
Electronic Warfare Division (EWD)
Release Authority:
Chief, Electronic Warfare Division
Task Sponsor:
DST
Task Number:
DST 99/177
File Number:
9505/19/21
Pages:
24
References:
1
URI:
http://hdl.handle.net/1947/3614

Abstract

Reactive ion etching (RIE) of lithium niobate substrates has been performed using CF4:O2 chemistry. A maximum etch rate of 38 A/min was obtained, and a deepest etch of 1.2 micro-m was achieved. The x-cut crystal orientation of the lithium niobate crystal etched more slowly than the z-cut orientation, at a ratio of 8:15. Sidewall roughness was minimsed at the expense of etch rate by increasing the oxygen flow rate for fixed CF4 flow rate. The achieved etch rate is suitable for low refractive index contrast devices such as integrated optical grating or lenses. However the low etch rate is impractical for low drive voltage etched modulators.

Executive Summary

Lithium Niobate is a useful synthetic material for integrated optical devices such as wideband electro-optical modulators. Etching the Lithium Niobate can reduce the drive voltage and improve efficiency. This work was undertaken under task DST99/177. Reactive ion etching (RIE) of lithium niobate substrates has been performed using CF4:O2 chemistry. A maximum etch rate of 38 Å/min was obtained, and a deepest etch of 1.2 μm was achieved. The x-cut crystal orientation of the lithium niobate crystal etched more slowly than the z-cut orientation, at a ratio of 8:15. Sidewall roughness was minimised at the expense of etch rate by increasing the oxygen flow rate for fixed CF4 flow rate. The achieved etch rate is suitable for low refractive index contrast devices such as integrated optical gratings or lenses. However the low etch rate is impractical for low drive voltage etched modulators.

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